Morzsák

Oldal cĂ­me

Development of High-Sensitivity Optical Methods for the Monitoring of Interfaces

CĂ­mlapos tartalom

Ellipsometry measures the change of polarization of an incident beam caused by a sample for determining surface layers.

RP /Rs= tan (𝛹) e i𝛥 (1)

In Situ Spectroscopic Ellipsometry measures a sample "in position” as conditions are varied. The sample can be characterized:

  • Prior to Film Deposition for Accurate Substrate Characterization

  • ln Real-time for Thickness and Optical Constants Monitoring

  • Before exposure to Air/Oxidation